After the bad publicity that cost it the Snapdragon 810, Qualcomm is currently redoubling its efforts to make a flawless with the Snapdragon 820. The company’s new Soc is currently being tested at Samsung, which is considering integrating it into its Galaxy S7. In addition, a still revamped 3.X version is expected to be delivered to manufacturers soon. Today, a new benchmark of the Soc has just surfaced and allows us to better understand the performance gap with the Snapdragon 810.
- On the same theme: Snapdragon 820, four hearts to gain power
Qualcomm’s next chip is revealed.
On the graph below are the AnTuTu benchmark results of two Galaxy S7 prototypes, both equipped with a Snapdragon 820. A Model A (yellow) and a Model B (in red) that scores higher than 70,000 points on the test tool. At the moment, it is not yet known if the prototype “B” is equipped with the 3.X version of the processor but it seems to be equipped with a more powerful version than the “A”.
The graph also gives us a first clue about the power gain achieved between the Snapdragon 810 and the B prototype equipped with the most powerful version of the Snapdragon 820. Concretely the latest version of the new Soc is 1.3 to 1.77 times more powerful than the Snapdragon 810, which again corroborates everything we have read or heard about it, as well as the latest statements from Qualcomm.
A very encouraging discovery that gives hope that the performance problems encountered with the S810 will soon be a bad memory thanks to the new Kryo hearts developed by Qualcomm. In addition, thanks to the 16 nanometer engraving, the controlled energy consumption will preserve the autonomy of the smartphones that will be equipped with the Soc.
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