Samsung should burn the Snapdragon 830: 10 nm and up to 8GB of RAM!

As the first smartphones under Snapdragon 820 are just starting to land, the first information about the Snapdragon 830 is beginning to surface. Samsung would be the 10 nanometer engraving and the Soc would support up to 8GB of RAM.

As analyst Pan Jiutang suggested in mid-December, Samsung would be the one to print the Snapdragon 830, Qualcomm’s next mobile chip for the high end of 2017. Today the Leaker Ice Universe returns to the issue to bring us a new information and even advances a technical sheet and a model number msm8998.

According to him, Qualcomm would continue to use its new custom Kryo hearts,already used in the Snapdragon 820. This belies the rumor that Qualcomm would return to ARM as it did last year with the Snapdragon 810. Improved hearts engraved in 10 nanometers.

A fine engraving that would allow the processor to offer both more power but also better energy efficiency and, therefore, better autonomy. The 14 nanometer engraving initiated last year on mobile by Samsung had brought a lot to this field. Let’s hope that manufacturers won’t take the opportunity to reduce the thickness of their future smartphones, average smaller batteries.

In any case, it will not be surprising to see the name of Samsung appear in this new report. The Korean has just launched mass production of Qualcomm’s latest Soc and is currently preparing the third generation of its 14 nanometer engraving process. Engraving in 10 nanometers should therefore be the next step.

A Snapdragon 830 that should also support up to 8GB of RAM. Enough to promise a multitasking without limits! However, this does not mean that the builders will necessarily go that far. In addition, there is no information that future 8GB mobile chips will be available next year.