After the various setbacks encountered with the Snapdragon 810, Qualcomm intends to raise the bar with its next processor. The Snapdragon 820 is expected for the last quarter of the year at the heart of the next flagships of Sony, HTC and Xiaomi. With its Homemade Kryo cores and the inputs of Samsung’s 14 nanometer engraving, it should offer better performance than its predecessor and above all better thermal management.
- Related: Snapdragon 820, 3 Ghz and a 14 nanometer engraving
Snapdragon 820, Qualcomm’s next secret weapon.
Today, a first benchmark of the Snapdragon 820 processor has just surfaced on the web before being removed from the Geekbench database, probably for reasons of confidentiality. However, we now have a first glimpse of its performance. On the single core test, the Soc is ahead of the S810 but also ahead of Samsung’s Exynos 7420 with a score of 1732 points which remains very encouraging.
On the other hand, on the multi-core test, things get a little tougher as it gets a score of 4970 points against 5284 points for the Exynos 7420 who wins this round and 4424 points for the S810 which remains behind. The Snapdragon 820 is just in between. This difference could be explained by the number of hearts on board. Although it remains to be confirmed, a few days ago, a report reported a quad core and non octo core archirecture for qualcomm’s next Soc.
- Related: The Snapdragon 620 is more powerful than the 810 on some tests
In any case, the Snapdragon 820 outperforms the S810 on both tests. This result is therefore very encouraging and gives hope that the temperature problems encountered with the current model will not affect its successor.
Snapdragon 820
Snapdragon 810
Exynos 7420
via